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Minimum Quantity :
Drain to Source Voltage (Vdss) :
Current - Continuous Drain (Id) @ 25°C :
Vgs(th) (Max) @ Id :
Gate Charge (Qg) (Max) @ Vgs :
Input Capacitance (Ciss) (Max) @ Vds :
Drive Voltage (Max Rds On, Min Rds On) :
Power Dissipation (Max) :
4 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Package / Case Series Packaging Technology Mounting Type Operating Temperature Part Status Supplier Device Package Factory Stock Minimum Quantity FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max) Power Dissipation (Max)
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Infineon Technologies MOSFET N-CH 40V 22A PQFN 8-VQFN Exposed Pad HEXFET® Cut Tape (CT) MOSFET (Metal Oxide) Surface Mount -55°C ~ 150°C (TJ) Obsolete PQFN (5x6) 0 1 N-Channel - 40V 22A (Ta), 100A (Tc) 4.3 mOhm @ 50A, 10V 4V @ 100µA 65nC @ 10V 2460pF @ 25V 10V ±20V 3.6W (Ta), 105W (Tc)
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Infineon Technologies MOSFET N-CH 40V 22A PQFN 8-VQFN Exposed Pad HEXFET® Tape & Reel (TR) MOSFET (Metal Oxide) Surface Mount -55°C ~ 150°C (TJ) Obsolete PQFN (5x6) 0 4000 N-Channel - 40V 22A (Ta), 100A (Tc) 4.3 mOhm @ 50A, 10V 4V @ 100µA 65nC @ 10V 2460pF @ 25V 10V ±20V 3.6W (Ta), 105W (Tc)
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Infineon Technologies MOSFET N-CH 30V 50A IPAK TO-251-3 Short Leads, IPak, TO-251AA OptiMOS™ Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 175°C (TJ) Obsolete P-TO251-3-1 0 1500 N-Channel - 30V 50A (Tc) 4.3 mOhm @ 50A, 10V 2V @ 70µA 40nC @ 5V 5200pF @ 15V 4.5V, 10V ±20V 115W (Tc)
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Infineon Technologies MOSFET N-CH 30V 50A IPAK TO-251-3 Stub Leads, IPak OptiMOS™ Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 175°C (TJ) Obsolete PG-TO251-3 0 1500 N-Channel - 30V 50A (Tc) 4.3 mOhm @ 50A, 10V 2V @ 70µA 40nC @ 5V 5200pF @ 15V 4.5V, 10V ±20V 115W (Tc)
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