Build a global manufacturer and supplier trusted trading platform.
Supplier Device Package :
Minimum Quantity :
Drain to Source Voltage (Vdss) :
Current - Continuous Drain (Id) @ 25°C :
Vgs(th) (Max) @ Id :
Gate Charge (Qg) (Max) @ Vgs :
Input Capacitance (Ciss) (Max) @ Vds :
Drive Voltage (Max Rds On, Min Rds On) :
Power Dissipation (Max) :
2 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Package / Case Series Packaging Technology Mounting Type Operating Temperature Part Status Supplier Device Package Factory Stock Minimum Quantity FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max) Power Dissipation (Max)
Default Photo
Per Unit
$1.564
VIEW
RFQ
Infineon Technologies MOSFET N-CH 40V 100A TO220-3 TO-220-3 OptiMOS™ Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 175°C (TJ) Not For New Designs PG-TO220-3-1 0 500 N-Channel - 40V 100A (Tc) 2.8 mOhm @ 80A, 10V 4V @ 150µA 145nC @ 10V 9600pF @ 25V 10V ±20V 214W (Tc)
Default Photo
VIEW
RFQ
STMicroelectronics MOSFET N-CH 30V 160A POWERSO-10 PowerSO-10 Exposed Bottom Pad STripFET™ Tape & Reel (TR) MOSFET (Metal Oxide) Surface Mount 175°C (TJ) Obsolete 10-PowerSO 0 600 N-Channel - 30V 160A (Tc) 2.8 mOhm @ 80A, 10V 1V @ 250µA 140nC @ 10V 4700pF @ 25V 5V, 10V ±15V 210W (Tc)
Page 1 / 1