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IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Package / Case Series Packaging Technology Mounting Type Operating Temperature Part Status Supplier Device Package Factory Stock Minimum Quantity FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max) Power Dissipation (Max)
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Per Unit
$1.933
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RFQ
Infineon Technologies MOSFET N-CH 100V 100A TO263-3 TO-263-3, D²Pak (2 Leads + Tab), TO-263AB OptiMOS™ Tape & Reel (TR) MOSFET (Metal Oxide) Surface Mount -55°C ~ 175°C (TJ) Not For New Designs PG-TO263-3-2 0 1000 N-Channel - 100V 100A (Tc) 4.8 mOhm @ 100A, 10V 4V @ 240µA 176nC @ 10V 11570pF @ 25V 10V ±20V 300W (Tc)
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Per Unit
$4.645
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Infineon Technologies MOSFET N-CH 150V 120A TO263-3 TO-263-3, D²Pak (2 Leads + Tab), TO-263AB OptiMOS™-5 Tape & Reel (TR) MOSFET (Metal Oxide) Surface Mount -55°C ~ 150°C (TJ) Active D²PAK (TO-263AB) 0 1000 N-Channel - 150V 120A 4.8 mOhm @ 100A, 10V 4.9V @ 255µA 84nC @ 10V 380pF @ 75V 10V ±20V 313W (Tc)
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Per Unit
$4.850
RFQ
1,565
In-stock
Infineon Technologies MOSFET N-CH 120V 100A TO220-3 TO-220-3 OptiMOS™ Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 175°C (TJ) Active PG-TO220-3-1 0 1 N-Channel - 120V 100A (Tc) 4.8 mOhm @ 100A, 10V 4V @ 230µA 182nC @ 10V 12000pF @ 60V 10V ±20V 300W (Tc)
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