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Supplier Device Package :
Drain to Source Voltage (Vdss) :
Gate Charge (Qg) (Max) @ Vgs :
Input Capacitance (Ciss) (Max) @ Vds :
Drive Voltage (Max Rds On, Min Rds On) :
Power Dissipation (Max) :
3 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Package / Case Series Packaging Technology Mounting Type Operating Temperature Part Status Supplier Device Package Factory Stock Minimum Quantity FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max) Power Dissipation (Max)
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RFQ
Infineon Technologies MOSFET N-CH 60V 90A TO252-3 TO-252-3, DPak (2 Leads + Tab), SC-63 OptiMOS™ Tape & Reel (TR) MOSFET (Metal Oxide) Surface Mount -55°C ~ 175°C (TJ) Obsolete PG-TO252-3 0 2500 N-Channel - 60V 90A (Tc) 5.3 mOhm @ 90A, 10V 4V @ 58µA 82nC @ 10V 6600pF @ 30V 10V ±20V 115W (Tc)
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Per Unit
$1.362
VIEW
RFQ
Infineon Technologies MOSFET N-CH TO252-3 TO-252-3, DPak (2 Leads + Tab), SC-63 Automotive, AEC-Q101, OptiMOS™ Tape & Reel (TR) MOSFET (Metal Oxide) Surface Mount -55°C ~ 175°C (TJ) Active PG-TO252-3-313 0 2500 N-Channel - 80V 90A (Tc) 5.3 mOhm @ 90A, 10V 4V @ 90µA 68nC @ 10V 4800pF @ 25V 10V ±20V 144W (Tc)
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Per Unit
$1.057
RFQ
12,500
In-stock
Infineon Technologies MOSFET N-CH 80V 90A TO252-3 TO-252-3, DPak (2 Leads + Tab), SC-63 OptiMOS™ Tape & Reel (TR) MOSFET (Metal Oxide) Surface Mount -55°C ~ 175°C (TJ) Active PG-TO252-3 0 2500 N-Channel - 80V 90A (Tc) 5.3 mOhm @ 90A, 10V 3.5V @ 90µA 69nC @ 10V 4750pF @ 40V 6V, 10V ±20V 150W (Tc)
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