Build a global manufacturer and supplier trusted trading platform.
Supplier Device Package :
Minimum Quantity :
Drain to Source Voltage (Vdss) :
Current - Continuous Drain (Id) @ 25°C :
Vgs(th) (Max) @ Id :
Gate Charge (Qg) (Max) @ Vgs :
Input Capacitance (Ciss) (Max) @ Vds :
Drive Voltage (Max Rds On, Min Rds On) :
3 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Package / Case Series Packaging Technology Mounting Type Operating Temperature Part Status Supplier Device Package Factory Stock Minimum Quantity FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max) Power Dissipation (Max)
Default Photo
VIEW
RFQ
Infineon Technologies MOSFET N-CH 250V 3.8A PQFN 8-PowerVDFN HEXFET® Cut Tape (CT) MOSFET (Metal Oxide) Surface Mount -55°C ~ 150°C (TJ) Obsolete 8-PQFN (5x6) 0 1 N-Channel - 250V 3.8A (Ta) 100 mOhm @ 5.7A, 10V 5V @ 150µA 56nC @ 10V 2150pF @ 50V 10V ±20V 3.6W (Ta), 8.3W (Tc)
Default Photo
Per Unit
$1.587
VIEW
RFQ
Infineon Technologies MOSFET N-CH 250V 3.8A PQFN56 8-PowerVDFN HEXFET® Tape & Reel (TR) MOSFET (Metal Oxide) Surface Mount -55°C ~ 150°C (TJ) Active 8-PQFN (5x6) 0 4000 N-Channel - 250V 3.8A (Ta) 100 mOhm @ 5.7A, 10V 5V @ 150µA 56nC @ 10V 2150pF @ 50V 10V ±20V 3.6W (Ta), 8.3W (Tc)
Default Photo
Per Unit
$0.591
RFQ
3,000
In-stock
onsemi MOSFET P-CH 60V 5.7A POWER33 8-PowerWDFN PowerTrench® Tape & Reel (TR) MOSFET (Metal Oxide) Surface Mount -55°C ~ 150°C (TJ) Active 8-MLP (3.3x3.3) 0 3000 P-Channel - 60V 5.7A (Ta), 13.5A (Tc) 100 mOhm @ 5.7A, 10V 3V @ 250µA 20nC @ 10V 1055pF @ 30V 4.5V, 10V ±20V 2.1W (Ta), 42W (Tc)
Page 1 / 1