- Package / Case :
- Series :
- Packaging :
- Operating Temperature :
- Part Status :
- Supplier Device Package :
- FET Type :
- FET Feature :
- Current - Continuous Drain (Id) @ 25°C :
- Vgs(th) (Max) @ Id :
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3 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Technology | Mounting Type | Operating Temperature | Part Status | Supplier Device Package | Factory Stock | Minimum Quantity | FET Type | Power - Max | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | Power Dissipation (Max) | |
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VIEW | Infineon Technologies | MOSFET N-CH 4VSON | 4-PowerTSFN | CoolMOS™ C7 | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -40°C ~ 150°C (TJ) | Active | PG-VSON-4 | 0 | 3000 | N-Channel | - | 650V | 12A (Tc) | 195 mOhm @ 2.9A, 10V | 4V @ 290µA | 23nC @ 10V | 1150pF @ 400V | 10V | ±20V | 75W (Tc) | ||||
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VIEW | Infineon Technologies | MOSFET 2N-CH 100V 2.3A 8PQFN | 8-PowerVDFN | HEXFET® | Cut Tape (CT) | Surface Mount | -55°C ~ 150°C (TJ) | Obsolete | 8-PQFN (3.3x3.3), Power33 | 0 | 1 | 2 N-Channel (Dual) | 2.3W | Standard | 100V | 2.3A | 195 mOhm @ 2.9A, 10V | 4V @ 10µA | 6.3nC @ 10V | 251pF @ 25V | |||||||
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VIEW | Infineon Technologies | MOSFET 2N-CH 100V 2.3A 8PQFN | 8-PowerVDFN | HEXFET® | Tape & Reel (TR) | Surface Mount | -55°C ~ 150°C (TJ) | Active | 8-PQFN (3.3x3.3), Power33 | 0 | 4000 | 2 N-Channel (Dual) | 2.3W | Standard | 100V | 2.3A | 195 mOhm @ 2.9A, 10V | 4V @ 10µA | 6.3nC @ 10V | 251pF @ 25V |
