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Supplier Device Package :
Minimum Quantity :
Current - Continuous Drain (Id) @ 25°C :
Input Capacitance (Ciss) (Max) @ Vds :
2 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Package / Case Series Packaging Technology Mounting Type Operating Temperature Part Status Supplier Device Package Factory Stock Minimum Quantity FET Type Power - Max FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max) Power Dissipation (Max)
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Per Unit
$0.191
RFQ
45,000
In-stock
Diodes Incorporated MOSFET N-CH 20V 4.2A SOT23 TO-236-3, SC-59, SOT-23-3 - Tape & Reel (TR) MOSFET (Metal Oxide) Surface Mount -55°C ~ 150°C (TJ) Active SOT-23-3 0 3000 N-Channel   - 20V 4.2A (Ta) 25 mOhm @ 8.2A, 4.5V 900mV @ 250µA 9.6nC @ 4.5V 829.9pF @ 10V 1.8V, 4.5V ±8V 780mW (Ta)
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RFQ
Diodes Incorporated MOSFET 2N-CH 20V 4.9A 8TSSOP 8-TSSOP (0.173", 4.40mm Width) - Tape & Reel (TR)   Surface Mount -55°C ~ 150°C (TJ) Active 8-TSSOP 0 2500 2 N-Channel (Dual) Common Drain 870mW Logic Level Gate 20V 4.9A 25 mOhm @ 8.2A, 4.5V 900mV @ 250µA 9.6nC @ 4.5V 841pF @ 10V      
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