Build a global manufacturer and supplier trusted trading platform.
Supplier Device Package :
Minimum Quantity :
Drain to Source Voltage (Vdss) :
Vgs(th) (Max) @ Id :
Input Capacitance (Ciss) (Max) @ Vds :
Drive Voltage (Max Rds On, Min Rds On) :
Power Dissipation (Max) :
2 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Package / Case Series Packaging Technology Mounting Type Operating Temperature Part Status Supplier Device Package Factory Stock Minimum Quantity FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max) Power Dissipation (Max)
BUZ31L
5+
$1.000
50+
$0.800
RFQ
18,000
In-stock
Infineon Technologies MOSFET N-CH 200V 13.5A TO220AB TO-220-3 SIPMOS® Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 150°C (TJ) Obsolete PG-TO-220-3 0 500 N-Channel - 200V 13.5A (Tc) 200 mOhm @ 7A, 5V 2V @ 1mA - 1600pF @ 25V 5V ±20V 95W (Tc)
Default Photo
Per Unit
$2.361
VIEW
RFQ
STMicroelectronics MOSFET N-CH 600V 13.5A D2PAK TO-263-3, D²Pak (2 Leads + Tab), TO-263AB SuperMESH™ Tape & Reel (TR) MOSFET (Metal Oxide) Surface Mount -55°C ~ 150°C (TJ) Active D2PAK 0 1000 N-Channel - 600V 13.5A (Tc) 500 mOhm @ 6A, 10V 4.5V @ 100µA 75nC @ 10V 2220pF @ 25V 10V ±30V 160W (Tc)
Page 1 / 1