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Drain to Source Voltage (Vdss) :
Gate Charge (Qg) (Max) @ Vgs :
Input Capacitance (Ciss) (Max) @ Vds :
Power Dissipation (Max) :
3 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Series Packaging Technology Mounting Type Operating Temperature Part Status Supplier Device Package Factory Stock Minimum Quantity FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max) Power Dissipation (Max)
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Per Unit
$3.370
RFQ
1,628
In-stock
Texas instruments MOSFET N-CH 80V 150A TO-220 NexFET™ Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 175°C (TJ) Active TO-220-3 0 1 N-Channel - 80V 150A (Ta) 3.8 mOhm @ 100A, 6V 3.2V @ 250µA 76nC @ 10V 7820pF @ 40V 6V, 10V ±20V 300W (Tc)
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Per Unit
$5.080
RFQ
2,983
In-stock
Texas instruments MOSFET N-CH 100V TO-220 NexFET™ Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 175°C (TJ) Active TO-220-3 0 1 N-Channel - 100V 150A (Ta) 2.7 mOhm @ 100A, 10V 3.2V @ 250µA 153nC @ 10V 12000pF @ 50V 6V, 10V ±20V 375W (Tc)
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Per Unit
$3.370
RFQ
6,168
In-stock
Texas instruments MOSFET N-CH 100V TO-220 NexFET™ Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 175°C (TJ) Active TO-220-3 0 1 N-Channel - 100V 150A (Ta) 3.6 mOhm @ 100A, 10V 3.4V @ 250µA 101nC @ 10V 7930pF @ 50V 6V, 10V ±20V 300W (Tc)
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