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- Vgs(th) (Max) @ Id :
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8 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Technology | Mounting Type | Operating Temperature | Part Status | Supplier Device Package | Factory Stock | Minimum Quantity | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | Power Dissipation (Max) | |
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VIEW | Infineon Technologies | MOSFET N-CH 100V 32A DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 | HEXFET® | Tube | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | D-PAK | 0 | 3000 | N-Channel | 100V | 32A (Tc) | 44 mOhm @ 16A, 10V | 4V @ 250µA | 71nC @ 10V | 1960pF @ 25V | 10V | ±20V | 130W (Tc) | ||||
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VIEW | Infineon Technologies | MOSFET N-CH 8TDSON | 8-PowerTDFN | OptiMOS™ | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Active | PG-TSDSON-8-FL | 0 | 5000 | N-Channel | 150V | 32A (Tc) | 30 mOhm @ 16A, 10V | 4.6V @ 32µA | 13nC @ 10V | 950pF @ 75V | 8V, 10V | ±20V | 62.5W (Tc) | |||
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VIEW | STMicroelectronics | MOSFET N-CH 100V 30A DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 | DeepGATE™, STripFET™ VII | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | Active | DPAK | 0 | 2500 | N-Channel | 100V | 32A (Tc) | 24 mOhm @ 16A, 10V | 4.5V @ 250µA | 19nC @ 10V | 1270pF @ 50V | 10V | 20V | 50W (Tc) | |||
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512
In-stock
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STMicroelectronics | MOSFET N-CH 650V 32A TO247 | TO-247-3 | MDmesh™ M2 | Tube | MOSFET (Metal Oxide) | Through Hole | 150°C (TJ) | Active | TO-247 | 0 | 1 | N-Channel | 650V | 32A (Tc) | 99 mOhm @ 16A, 10V | 4V @ 250µA | 56.5nC @ 10V | 2355pF @ 100V | 10V | ±25V | 250W (Tc) | |||
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985
In-stock
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STMicroelectronics | MOSFET N-CH 650V 32A TO220FP | TO-220-3 Full Pack | MDmesh™ M2 | Tube | MOSFET (Metal Oxide) | Through Hole | 150°C (TJ) | Active | TO-220FP | 0 | 1 | N-Channel | 650V | 32A (Tc) | 99 mOhm @ 16A, 10V | 4V @ 250µA | 56.5nC @ 10V | 2355pF @ 100V | 10V | ±25V | 25W (Tc) | |||
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4,000
In-stock
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Infineon Technologies | MOSFET N-CH 100V 32A DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 | HEXFET® | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | Active | D-PAK | 0 | 2000 | N-Channel | 100V | 32A (Tc) | 44 mOhm @ 16A, 10V | 4V @ 250µA | 71nC @ 10V | 1960pF @ 25V | 10V | ±20V | 130W (Tc) | |||
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9,330
In-stock
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onsemi | MOSFET N-CH 60V 32A TO-220 | TO-220-3 | QFET® | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 175°C (TJ) | Active | TO-220AB | 0 | 1 | N-Channel | 60V | 32A (Tc) | 35 mOhm @ 16A, 10V | 2.5V @ 250µA | 20nC @ 5V | 1040pF @ 25V | 5V, 10V | ±20V | 79W (Tc) | |||
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2,500
In-stock
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onsemi | MOSFET N-CH 100V 32A DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 | - | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | Active | DPAK | 0 | 2500 | N-Channel | 100V | 32A (Tc) | 37 mOhm @ 32A, 10V | 4V @ 250µA | 40nC @ 10V | 1450pF @ 25V | 10V | ±20V | 100W (Tc) |
