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Drain to Source Voltage (Vdss) :
Gate Charge (Qg) (Max) @ Vgs :
Input Capacitance (Ciss) (Max) @ Vds :
Power Dissipation (Max) :
2 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Package / Case Series Packaging Technology Mounting Type Operating Temperature Part Status Supplier Device Package Factory Stock Minimum Quantity FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max) Power Dissipation (Max)
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Per Unit
$0.431
RFQ
6,000
In-stock
onsemi MOSFET N-CH 100V 3.3A 6-MLP 6-WDFN Exposed Pad PowerTrench® Tape & Reel (TR) MOSFET (Metal Oxide) Surface Mount -55°C ~ 150°C (TJ) Active 6-MicroFET (2x2) 0 3000 N-Channel 100V 3.3A (Ta) 88 mOhm @ 3.3A, 10V 3V @ 250µA 7.3nC @ 10V 450pF @ 50V 4.5V, 10V ±20V 2.4W (Ta)
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Per Unit
$0.219
RFQ
30,000
In-stock
Diodes Incorporated MOSFET P-CH 40V 3.3A U-DFN2020 6-UDFN Exposed Pad - Tape & Reel (TR) MOSFET (Metal Oxide) Surface Mount -55°C ~ 150°C (TJ) Active U-DFN2020-6 (Type E) 0 3000 P-Channel 40V 3.3A (Ta) 33 mOhm @ 4.4A, 10V 2.2V @ 250µA 23.2nC @ 10V 1382pF @ 20V 4.5V, 10V ±20V 700mW (Ta)
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