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8 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Technology | Mounting Type | Operating Temperature | Part Status | Supplier Device Package | Factory Stock | Minimum Quantity | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | Power Dissipation (Max) | |
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VIEW | Infineon Technologies | MOSFET N-CH 60V 1.8A SOT-223 | TO-261-4, TO-261AA | SIPMOS® | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Obsolete | PG-SOT223-4 | 0 | 2000 | N-Channel | 60V | 1.8A (Ta) | 300 mOhm @ 1.8A, 10V | 1.8V @ 400µA | 17nC @ 10V | 368pF @ 25V | 4.5V, 10V | ±20V | 1.8W (Ta) | |||
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VIEW | Infineon Technologies | MOSFET N-CH 60V 1.8A SOT223 | TO-261-4, TO-261AA | SIPMOS® | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Obsolete | PG-SOT223-4 | 0 | 1000 | N-Channel | 60V | 1.8A (Ta) | 300 mOhm @ 1.8A, 10V | 1.8V @ 400µA | 17nC @ 10V | 368pF @ 25V | 4.5V, 10V | ±20V | 1.8W (Ta) | |||
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VIEW | Infineon Technologies | MOSFET N-CH 60V 1.8A SOT223 | TO-261-4, TO-261AA | SIPMOS® | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Obsolete | PG-SOT223-4 | 0 | 1000 | N-Channel | 60V | 1.8A (Ta) | 300 mOhm @ 1.8A, 10V | 1.8V @ 400µA | 17nC @ 10V | 368pF @ 25V | 4.5V, 10V | ±20V | 1.8W (Ta) | |||
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VIEW | Infineon Technologies | MOSFET N-CH 100V 1.7A SOT-223 | TO-261-4, TO-261AA | OptiMOS™ | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Active | PG-SOT223-4 | 0 | 1000 | N-Channel | 100V | 1.8A (Ta) | 230 mOhm @ 1.8A, 10V | 1.8V @ 218µA | 14.3nC @ 10V | 329pF @ 25V | 4.5V, 10V | ±20V | 1.8W (Ta) | |||
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VIEW | Infineon Technologies | MOSFET N-CH 100V 1.7A SOT-223 | TO-261-4, TO-261AA | OptiMOS™ | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Active | PG-SOT223-4 | 0 | 1000 | N-Channel | 100V | 1.8A (Ta) | 240 mOhm @ 1.8A, 10V | 4V @ 218µA | 9.3nC @ 10V | 265pF @ 25V | 10V | ±20V | 1.8W (Ta) | |||
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4,000
In-stock
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Infineon Technologies | MOSFET N-CH 60V 1.8A SOT223 | TO-261-4, TO-261AA | SIPMOS® | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Active | PG-SOT223-4 | 0 | 1000 | N-Channel | 60V | 1.8A (Ta) | 300 mOhm @ 1.8A, 10V | 1.8V @ 400µA | 17nC @ 10V | 368pF @ 25V | 4.5V, 10V | ±20V | 1.8W (Ta) | |||
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87,000
In-stock
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Diodes Incorporated | MOSFET N-CH 30V 1.8A SOT23-3 | TO-236-3, SC-59, SOT-23-3 | - | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Active | SOT-23-3 | 0 | 3000 | N-Channel | 30V | 1.8A (Ta) | 120 mOhm @ 2.5A, 10V | 1V @ 250µA | 3.9nC @ 10V | 190pF @ 25V | 4.5V, 10V | ±20V | 625mW (Ta) | |||
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3,000
In-stock
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onsemi | MOSFET P-CH 60V 1.8A CPH3 | TO-236-3, SC-59, SOT-23-3 | - | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | 150°C (TJ) | Active | 3-CPH | 0 | 3000 | P-Channel | 60V | 1.8A (Ta) | 250 mOhm @ 1A, 10V | 2.6V @ 1mA | 6nC @ 10V | 262pF @ 20V | 4V, 10V | ±20V | 1W (Ta) |
