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Supplier Device Package :
Minimum Quantity :
Drain to Source Voltage (Vdss) :
Gate Charge (Qg) (Max) @ Vgs :
Input Capacitance (Ciss) (Max) @ Vds :
Drive Voltage (Max Rds On, Min Rds On) :
Power Dissipation (Max) :
3 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Package / Case Series Packaging Technology Mounting Type Operating Temperature Part Status Supplier Device Package Factory Stock Minimum Quantity FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max) Power Dissipation (Max)
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Per Unit
$0.270
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RFQ
Infineon Technologies MOSFET N-CH 600V 3.1A TO-251-3 TO-251-3 Short Leads, IPak, TO-251AA CoolMOS™ CE Tube MOSFET (Metal Oxide) Through Hole -40°C ~ 150°C (TJ) Active PG-TO251-3 0 1500 N-Channel - 600V 3.1A (Tc) 1.5 Ohm @ 1.1A, 10V 3.5V @ 90µA 9.4nC @ 10V 200pF @ 100V 10V ±20V 49W (Tc)
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Per Unit
$0.210
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RFQ
Infineon Technologies MOSFET N-CH 500V 3.1A TO-251 TO-251-3 Short Leads, IPak, TO-251AA CoolMOS™ CE Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 150°C (TJ) Not For New Designs PG-TO251-3 0 1500 N-Channel - 500V 3.1A (Tc) 1.4 Ohm @ 900mA, 13V 3.5V @ 70µA 8.2nC @ 10V 178pF @ 100V 13V ±20V 42W (Tc)
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Per Unit
$0.191
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RFQ
Infineon Technologies MOSFET N-CH 500V 3.1A PG-TO-252 TO-252-3, DPak (2 Leads + Tab), SC-63 CoolMOS™ CE Tape & Reel (TR) MOSFET (Metal Oxide) Surface Mount -55°C ~ 150°C (TJ) Active PG-TO252-3 0 2500 N-Channel - 500V 3.1A (Tc) 1.4 Ohm @ 900mA, 13V 3.5V @ 70µA 8.2nC @ 10V 178pF @ 100V 13V ±20V 42W (Tc)
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