Build a global manufacturer and supplier trusted trading platform.
4 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Package / Case Series Packaging Technology Mounting Type Operating Temperature Part Status Supplier Device Package Factory Stock Minimum Quantity FET Type Power - Max FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max) Power Dissipation (Max)
Default Photo
VIEW
RFQ
Infineon Technologies MOSFET P-CH 20V 8.6A 8-TSSOP 8-TSSOP (0.173", 4.40mm Width) HEXFET® Tape & Reel (TR) MOSFET (Metal Oxide) Surface Mount -55°C ~ 150°C (TJ) Obsolete 8-TSSOP 0 4000 P-Channel   - 20V 8.6A (Ta) 15 mOhm @ 8.6A, 4.5V 1.2V @ 250µA 89nC @ 5V 4300pF @ 15V 2.5V, 4.5V ±12V 1.5W (Ta)
Default Photo
Per Unit
$0.609
RFQ
2,000
In-stock
Diodes Incorporated MOSFET P-CH 30V 8.6A PWRDI3333-8 8-PowerWDFN - Tape & Reel (TR) MOSFET (Metal Oxide) Surface Mount -55°C ~ 150°C (TJ) Active PowerDI3333-8 0 2000 P-Channel   - 30V 8.6A (Ta) 17 mOhm @ 10A, 10V 2.1V @ 250µA 47nC @ 10V 2230pF @ 15V 4.5V, 10V ±20V 900mW (Ta)
Default Photo
Per Unit
$0.203
VIEW
RFQ
Diodes Incorporated MOSFET P-CH 30V 8.6A POWERDI 8-PowerWDFN - Tape & Reel (TR) MOSFET (Metal Oxide) Surface Mount -55°C ~ 150°C (TJ) Not For New Designs PowerDI3333-8 0 2000 P-Channel   - 30V 8.6A (Ta) 17 mOhm @ 10A, 10V 2.1V @ 250µA 47nC @ 10V 2230pF @ 15V 4.5V, 10V ±20V 900mW (Ta)
Default Photo
VIEW
RFQ
Diodes Incorporated MOSFET ARRAY N-CH 40V 8.6A 8SOIC 8-SOIC (0.154", 3.90mm Width) - Tape & Reel (TR)   Surface Mount -55°C ~ 175°C (TJ) Active 8-SO 0 0 2 N-Channel (Dual) 1.4W, 2W Standard 40V 8.6A (Ta) 15 mOhm @ 12A, 10V 3V @ 250µA 33nC @ 10V 1938pF @ 15V      
Page 1 / 1